2sa1507/2sc3902 no.2101-1/7 applications ? color tv audio output, converters, inverters features ? high breakdown voltage ? large current capacity ? adoption of fbet and mbit process ? the plastic-covered heat sink eliminates the need for an insulator when mounting the 2sa1507/2sc3902 speci cations ( ): 2sa1507 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)180 v collector-to-emitter voltage v ceo (--)160 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)1.5 a collector current (pulse) i cp (--)2.5 a collector dissipation p c 1.5 w tc=25 c10w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7516a-002 ordering number : EN2101E 90512 tkim/21710cb tkim/53002rm(kt)/71598ha(kt)o2196ts(koto) 8-9520/3307ki/9116at,ts sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : to-126ml ? jeita, jedec : to-126 ? minimum packing quantity : 200 pcs./bag marking electrical connection 1 : emitter 2 : collector 3 : base sanyo : to-126ml 0.8 0.75 2.4 4.8 0.8 0.7 8.0 4.0 1.0 1.0 3.6 1.4 1.6 1.5 1.7 7.5 3.0 15.5 11.0 3.3 3.0 123 lot no. rank a1507 lot no. rank c3902 2 1 3 2sc3902 2 1 3 2sa1507 2sa1507s 2sa1507t 2sc3902s 2sc3902t 2sa1507/2sc3902 pnp / npn epitaxial planar silicon transistor 160v / 1.5a switching applications
2sa1507/2sc3902 no.2101-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)120v, i e =0a (--)1.0 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1.0 a dc current gain h fe 1v ce =(--)5v, i c =(--)100ma 100* 400* h fe 2v ce =(--)5v, i c =(--)10ma 90 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (22)14 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)500ma, i b =(--)50ma (--0.2)0.13 (--0.5)0.45 v base-to-emitter saturation voltage v be (sat) i c =(--)500ma, i b =(--)50ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--)180 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)160 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (0.7)0.04 s storage time t stg (0.7)1.2 s fall time t f (0.04)0.08 s * : the 2sa1507 / 2sc3902 are classi ed by 100ma h fe as follows: rank r s t h fe 100 to 200 140 to 280 200 to 400 switching time test circuit ordering information device package shipping memo 2sa1507s to-126ml 200pcs./bag pb free 2sa1507t to-126ml 200pcs./bag 2sc3902s to-126ml 200pcs./bag 2sc3902t to-126ml 200pcs./bag input 100v 50 r l 100 f 470 f --5v i c =10i b1 =--10i b2 =0.7a (for pnp, the polarit y is reversed.) + + v r pw=20 s d.c. 1% r b 14.3 i b1 i b2 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a itr03822 0--2 -- 1 -- 4 --3 --5 2 14 35 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 itr03823 --40ma --60ma --80ma --20ma --10ma --5ma - -2ma --1ma i b =0ma 2sa1507 2sc3902 i b =0ma 20ma 50ma 30ma 40ma 10ma 5ma 2ma 1ma
2sa1507/2sc3902 no.2101-3/7 collector-to-base voltage, v cb -- v cob -- v cb output capacitance, cob -- pf gain-bandwidth product, f t -- mhz f t -- i c collector current, i c -- a itr03831 itr03830 2 0.01 57 73 257 3 0.1 2 1.0 100 10 2 3 5 7 2 3 5 2 1.0 5 77 3257 3 10 100 10 100 2 2 3 5 7 3 5 7 2sa1507 2sc3902 2sa1507 2sc3902 2sa1507 / 2sc3902 v ce =10v 2sa1507 / 2sc3902 f=1mhz for pnp, minus sign is omitted. for pnp, minus sign is omitted. dc current gain, h fe h fe -- i c collector current, i c -- a collector current, i c -- a dc current gain, h fe h fe -- i c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a i c -- v be i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a 0 --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.6 0.4 0.8 1.0 0 10 20 30 40 50 0 itr03825 itr03824 -- 40 -- 30 -- 50 -- 10 -- 20 0 2sc3902 i b =0ma 2sa1507 --2.5ma --2.0ma --3.0ma --3.5ma --5.0ma --4.0ma --4.5ma --1.5ma --1.0ma --0.5ma i b =0ma 0.5ma 5.0ma 2.5ma 3.5ma 4.0ma 2.0ma 3.0ma 1.5ma 1.0ma 4.5ma itr03829 itr03828 itr03826 57 73 257 3 23 2 -- 0.01 -- 0.1 -- 1.0 -- 0.4 0 -- 0.8 -- 1.6 -- 1.2 -- 1.4 -- 1.0 -- 0.6 -- 0.2 0.4 0 0.8 1.6 1.4 1.0 0.6 0.2 1.2 10 100 7 7 5 3 2 5 5 3 2 10 100 7 7 5 5 3 2 5 3 2 57 73 2 0.01 0.1 57 3 23 2 1.0 -- 0.6 -- 0.8 0 -- 0.4 -- 0.2 -- 1.0 -- 1.2 0.6 0.8 0 0.4 0.2 1.0 1.2 itr03827 2sa1507 v ce =--5v 2sc3902 v ce =5v 2sa1507 v ce =--5v 2sc3902 v ce =5v --25 c 25 c ta=75 c --25 c 25 c ta=75 c --25 c 25 c ta=75 c --25 c 25 c ta=75 c
2sa1507/2sc3902 no.2101-4/7 case temperature, tc -- c p c -- tc collector dissipation, p c -- w 0 2 4 6 12 10 8 0 20 80 100 60 40 160 140 120 itr03838 2sa1507 / 2sc3902 collector-to-emitter voltage, v ce -- v a s o collector current, i c -- a ambient temperature, ta -- c p c -- ta collector dissipation, p c -- w 0.01 1.0 0.1 10 5 3 2 5 3 2 5 5 3 2 1.0 73 2 0 0.2 0.4 0.6 0.8 1.6 1.4 1.5 1.2 1.0 0 20 80 100 60 40 160 140 120 itr03836 no heat sink 7 10 53 27 53 2 100 itr03837 1ms 10ms 100ms dc operation (ta=25 c) dc operation (tc=25 c) ta=25 c single pulse for pnp, minus sign is omitted. 2sa1507 / 2sc3902 2sa1507 / 2sc3902 i cp =2.5a i c =1.5a v be (sat) -- i c collector current, i c -- a collector current, i c -- a v ce (sat) -- i c collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter saturation voltage, v be (sat) -- v collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a v ce (sat) -- i c v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v itr03834 -- 1.0 -- 10 3 5 7 2 3 5 7 2 7 -- 0.01 -- 0.1 57 3 2 -- 1.0 57 3 23 2 1.0 10 3 5 7 2 3 5 7 2 7 0.01 0.1 57 3 2 1.0 57 3 23 2 itr03835 2sa1507 i c / i b =10 2sc3902 i c / i b =10 25 c 75 c ta=--25 c 25 c 75 c ta=--25 c 2 -- 0.01 -- 0.1 57 73 2 -- 1.0 57 323 2 0.01 0.1 57 73 2 1.0 57 323 -- 10000 -- 1000 2 3 5 -- 100 2 3 5 2 3 5 10000 1000 2 3 5 100 2 3 5 2 3 5 itr03832 itr03833 2sc3902 i c / i b =10 2sa1507 i c / i b =10 --25 c 25 c ta=75 c --25 c 25 c ta=75 c
2sa1507/2sc3902 no.2101-5/7 bag packing speci cation 2sa1507s, 2sa1507t, 2sc3902s, 2sc3902t
2sa1507/2sc3902 no.2101-6/7 outline drawing 2sa1507s, 2sa1507t, 2sc3902s, 2sc3902t mass (g) unit 0.97 * for reference mm
2sa1507/2sc3902 ps no.2101-7/7 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
|
